BF992,215 datasheet

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Маркировка

BF992,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF992,215 Application: VHF Channel Mode: Depletion Channel Type: N Configuration: Single Dual Gate Continuous Drain Current: 0.04 A Current - Test: 15mA Current Rating: 40mA Drain Source Voltage (max): 20V Drain-source Breakdown Voltage: 20 V Frequency: 200MHz Gain: - Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1949195 Input Capacitance (typ)@vds: 4@10V@Gate 1/1.7@10V@Gate 2pF Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure: 1.2dB Noise Figure (max): 1.2(Typ)dB Number Of Elements: 1 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 2@10VpF Package / Case: SOT-143, SOT-143B, TO-253AA Package Type: SOT Pin Count: 3 +Tab Power - Output: - Power Dissipation: 200 mW Power Dissipation (max): 200mW Reverse Capacitance (typ): 0.03@10VpF Screening Level: Military Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Rated: 20V Voltage - Test: 10V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Factory Pack Quantity: 3000 Part # Aliases: BF992 T/R Other Names: 568-1971-2, 933615000215, BF992 T/R
Количество страниц

9 шт.
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78,98 KB